InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy.
Identifieur interne : 001E26 ( Main/Exploration ); précédent : 001E25; suivant : 001E27InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy.
Auteurs : RBID : pubmed:19620761Abstract
Single crystalline and single phase In(x)Ga(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology, structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high resolution x-ray diffraction (HR-XRD), and both room and low temperature photoluminescence spectra. The EDXA results showed that these nanopillars were composed of InGaN and the amount of indium incorporation in In(x)Ga(1-x)N NPs could be controlled by changing the growth temperature. The room temperature and low temperature PL spectra revealed that the emission wavelength could be tuned from a blue to green luminescent region depending on the growth temperature. The wavelength tuning was attributed to a higher amount of In incorporation at a lower growth temperature which was consistent with the EDXA and HR-XRD results.
DOI: 10.1088/0957-4484/20/32/325605
PubMed: 19620761
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy.</title><author><name sortKey="Vajpeyi, A P" uniqKey="Vajpeyi A">A P Vajpeyi</name><affiliation wicri:level="1"><nlm:affiliation>Microelectronics Research Group, Department of Physics, University of Crete, PO Box 2208, 71003, Greece. agam@physics.uoc.gr</nlm:affiliation><country xml:lang="fr">Grèce</country><wicri:regionArea>Microelectronics Research Group, Department of Physics, University of Crete, PO Box 2208, 71003</wicri:regionArea></affiliation></author><author><name sortKey="Ajagunna, A O" uniqKey="Ajagunna A">A O Ajagunna</name></author><author><name sortKey="Tsagaraki, K" uniqKey="Tsagaraki K">K Tsagaraki</name></author><author><name sortKey="Androulidaki, M" uniqKey="Androulidaki M">M Androulidaki</name></author><author><name sortKey="Georgakilas, A" uniqKey="Georgakilas A">A Georgakilas</name></author></titleStmt><publicationStmt><date when="2009">2009</date><idno type="doi">10.1088/0957-4484/20/32/325605</idno><idno type="RBID">pubmed:19620761</idno><idno type="pmid">19620761</idno><idno type="wicri:Area/Main/Corpus">001D69</idno><idno type="wicri:Area/Main/Curation">001D69</idno><idno type="wicri:Area/Main/Exploration">001E26</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Single crystalline and single phase In(x)Ga(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology, structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high resolution x-ray diffraction (HR-XRD), and both room and low temperature photoluminescence spectra. The EDXA results showed that these nanopillars were composed of InGaN and the amount of indium incorporation in In(x)Ga(1-x)N NPs could be controlled by changing the growth temperature. The room temperature and low temperature PL spectra revealed that the emission wavelength could be tuned from a blue to green luminescent region depending on the growth temperature. The wavelength tuning was attributed to a higher amount of In incorporation at a lower growth temperature which was consistent with the EDXA and HR-XRD results.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">19620761</PMID><DateCreated><Year>2009</Year><Month>07</Month><Day>21</Day></DateCreated><DateCompleted><Year>2009</Year><Month>12</Month><Day>15</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>20</Volume><Issue>32</Issue><PubDate><Year>2009</Year><Month>Aug</Month><Day>12</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy.</ArticleTitle><Pagination><MedlinePgn>325605</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/20/32/325605</ELocationID><Abstract><AbstractText>Single crystalline and single phase In(x)Ga(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology, structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high resolution x-ray diffraction (HR-XRD), and both room and low temperature photoluminescence spectra. The EDXA results showed that these nanopillars were composed of InGaN and the amount of indium incorporation in In(x)Ga(1-x)N NPs could be controlled by changing the growth temperature. The room temperature and low temperature PL spectra revealed that the emission wavelength could be tuned from a blue to green luminescent region depending on the growth temperature. The wavelength tuning was attributed to a higher amount of In incorporation at a lower growth temperature which was consistent with the EDXA and HR-XRD results.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Vajpeyi</LastName><ForeName>A P</ForeName><Initials>AP</Initials><Affiliation>Microelectronics Research Group, Department of Physics, University of Crete, PO Box 2208, 71003, Greece. agam@physics.uoc.gr</Affiliation></Author><Author ValidYN="Y"><LastName>Ajagunna</LastName><ForeName>A O</ForeName><Initials>AO</Initials></Author><Author ValidYN="Y"><LastName>Tsagaraki</LastName><ForeName>K</ForeName><Initials>K</Initials></Author><Author ValidYN="Y"><LastName>Androulidaki</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Georgakilas</LastName><ForeName>A</ForeName><Initials>A</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2009</Year><Month>07</Month><Day>21</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2009</Year><Month>7</Month><Day>21</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2009</Year><Month>7</Month><Day>22</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2009</Year><Month>7</Month><Day>22</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2009</Year><Month>7</Month><Day>22</Day><Hour>9</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0957-4484(09)14536-1</ArticleId><ArticleId IdType="doi">10.1088/0957-4484/20/32/325605</ArticleId><ArticleId IdType="pubmed">19620761</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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